Product Description
Sapphire scintillators have the following advantages: emission in the red region of the spectrum (690–900 nm) rather high light output, low levels of afterglow (Table 1.2 ), and insignificant absorption of their own radiation (~0.15 cm −1 ). Due to the radiation resistance of the matrix, sapphire stability is greater in comparison to other scintillators (Table 1.3 ). After the cessation of radiation interactions, the scintillation characteristics of sapphire scintillators are restored in several seconds.
Although there are lots substrates which are regarded as potential materials to replace sapphire substrate, it is still dominated in the substrates (for GaN LED growth) market, because of its reasonable price and relatively low mismatch. Zhongju is capable of processing substrates according to customer needs. Currently, our sapphire substrate productions ranges from 2 to 12 inches with high quality and accurate orientation.
Table 1 Size of substrates
|
|
2 inches Substrates |
4 inches Substrates |
6 inches Substrates |
|
Diameter (mm) |
50.9±0.1 |
100.1±0.1 |
150.1±0.1 |
|
Primary Flat Length (mm) |
16±1 |
31±1 |
47.5±1 |
Table 2 Specification of substrates
|
Material |
High purity single crystal sapphire |
|
Surface Orientation |
C-plane ± 0.1° |
|
Primary Flat Orientation |
A-plane ± 0.5° |
|
Broken edge length |
≤3mm |
|
Crack |
0 |
|
Defect |
No inclusion，twin，or boundary |
|
Bubble and cloud |
Dense bubbles, clouds, and scattered bubble marked and counted as defects by length |
|
EPD |
≤1000 pits/cm2 |
CONTACT US
ShanXiZhongJuJingKe Semiconductor Co., Ltd
Contact Person: yang
Phone：86-0354-3051057
Fax：
Address: No.2, machinery park, huitong industrial park, jinzhong development zone, shanxi demonstration zone,Jinzhong,Shanxi
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