Product Description
Sapphire substrates belong to one of the most significant aspects of the construc-tional application of this material. They are used for epitaxy of semiconductor films such as Si, GaN, AlGaN, and for making integrated circuits.
Sapphire substrates are inert, work at high temperatures and mechanical loads, and can be obtained in large size. Therefore, they are used even in those cases when the lattice parameters do not completely coincide with the parameters of heteroepitaxial structures.
Although there are lots substrates which are regarded as potential materials to replace sapphire substrate, it is still dominated in the substrates (for GaN LED growth) market, because of its reasonable price and relatively low mismatch. Zhongju is capable of processing substrates according to customer needs. Currently, our sapphire substrate productions ranges from 2 to 12 inches with high quality and accurate orientation.
Table 1 Size of substrates
|
|
2 inches Substrates |
4 inches Substrates |
6 inches Substrates |
|
Diameter (mm) |
50.9±0.1 |
100.1±0.1 |
150.1±0.1 |
|
Primary Flat Length (mm) |
16±1 |
31±1 |
47.5±1 |
Table 2 Specification of substrates
|
Material |
High purity single crystal sapphire |
|
Surface Orientation |
C-plane ± 0.1° |
|
Primary Flat Orientation |
A-plane ± 0.5° |
|
Broken edge length |
≤3mm |
|
Crack |
0 |
|
Defect |
No inclusion，twin，or boundary |
|
Bubble and cloud |
Dense bubbles, clouds, and scattered bubble marked and counted as defects by length |
|
EPD |
≤1000 pits/cm2 |
CONTACT US
ShanXiZhongJuJingKe Semiconductor Co., Ltd
Contact Person: yang
Phone：86-0354-3051057
Fax：
Address: No.2, machinery park, huitong industrial park, jinzhong development zone, shanxi demonstration zone,Jinzhong,Shanxi
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